Demand of EV/HEV's driving the market of IGBT and Super Junction MOSFET in Asia Pacific Region

 IGBT and Super Junction MOSFET Market

Insulated gate bipolar transistors (IGBTs) and super junction metal oxide field effect transistors (MOSFETs) are widely used as switches in a variety of power electronics systems, including wind turbines, uninterrupted power supplies (UPS), rail tractions, PV inverters, electric and hybrid electric vehicles, and a host of other industrial applications. IGBTs and super junction MOSFETs compete against other switching devices and technologies such as traditional MOSFETs, gallium nitride, and silicon carbide owing to higher efficiency and faster switching. IGBTs and super junction MOSFETs are preferred especially in applications requiring high input impedance and high voltage

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IGBTs are preferred for the applications which require high breakdown voltage and high input impedance, owing to their better conductivity modulation characteristics. IGBTs are cost effective as compared to traditional MOSFETs and are replacing traditional MOSFETs in various applications. IGBTs are preferred in motor drive applications where high current and voltage are required. Super junction MOSFETs achieve significant improvement over conventional MOSFETs by employing the principle of super junction charge-balance. Super-junction MOSFETs are manufactured with a deep-trench process technique. The market for IGBT is focusing on IGBT chip optimization, owing to the improved demand for thermal resistive, increased power output and higher density.

Rising deployment in electric vehicles and hybrid electric vehicles and increasing focus on greater energy efficiency are the leading factors boosting the IGBT and super junction MOSFET market. A growing market for smart grids holds immense opportunities. In contrast, stiff competition from other power semiconductors is likely to hold the IGBT and super junction MOSFET market back.

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Some of the most influential vendors in the market are ABB Ltd., Semikron Inc., Fairchild Semiconductor International Inc., Infineon Technologies AG, Mitsubishi Electric Corporation, Hitachi Power Semiconductor Device Ltd., Toshiba Corporation, STMicroelectronics N.V., Fuji Electric Co. Ltd., and Vishay Intertechnology Inc.

The market of IGBT and Super Junction MOSFET is dominated by Asia Pacific, which accounted for a massive 39% of the global market in 2013. Asia Pacific is also projected to be the most rapidly expanding market over the report’s forecast period, owing to factors such as the increased demand for electric vehicles, the flourishing energy industry, and rising investments in the sector of high-speed rail. The thriving electronics manufacturing industry in countries such as Taiwan, China, and South Korea is also expected to boost the market for IGBT and super junction MOSFET in the region.

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